Effects of crystalline microstructure on epitaxial growth.

نویسنده

  • Amar
چکیده

The results of kinetic Monte Carlo simulations of epitaxial growth on fcc~100! and bcc~100! surfaces in which the correct crystal geometry is taken into account are reported. The existence of downward funneling to fourfold hollow sites leads to a downward current for large angles and to angle selection as observed in a variety of experiments. We have used our model to simulate Fe/Fe~100! deposition at room temperature and have compared our results with recent experiments. Excellent agreement is found for the selected angle, mound coarsening exponent n , and kinetic roughening exponent b as well as for the mound morphology. A theoretical analysis also leads to an accurate prediction of the observed mound angle for Fe/Fe~100! deposition at room temperature. The general dependence of the surface skewness, mound angle, and coarsening kinetics on temperature, deposition rate, and strength of the step barrier to interlayer diffusion is also studied and compared with recent experiments. While for a moderate step barrier we find an effective coarsening exponent n.0.16–0.25, for the case of a very large step barrier we find n. 1 3, which is significantly larger than found in previous models but in agreement with recent experiments on Rh/Rh~111!. @S0163-1829~96!05544-0#

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Microstructure and growth mode at early growth stage of laser-ablated epitaxial Pb„Zr0.52Ti0.48...O3 films on a SrTiO3 substrate

The surface morphology and microstructure of laser-ablated Pb~Zr0.52Ti0.48!O3 ~PZT! films on a ~100! SrTiO3 ~STO! substrate at early growth stage are characterized by means of atomic-force microscope, x-ray diffraction, and high-resolution transmission electron microscopy analysis. The ~100! STO surface is found to be very favorable for epitaxial growth of ~001! PZT films, which undergo a three...

متن کامل

Size-dependent silicon epitaxy at mesoscale dimensions.

New discoveries on collective processes in materials fabrication and performance are emerging in the mesoscopic size regime between the nanoscale, where atomistic effects dominate, and the macroscale, where bulk-like behavior rules. For semiconductor electronics and photonics, dimensional control of the architecture in this regime is the limiting factor for device performance. Epitaxial crystal...

متن کامل

Low temperature plasma deposition of silicon thin films: From amorphous to crystalline

We report on the epitaxial growth of crystalline silicon films on (100) oriented crystalline silicon substrates by standard plasma enhanced chemical vapor deposition at 175 °C. Such unexpected epitaxial growth is discussed in the context of deposition processes of silicon thin films, based on silicon radicals and nanocrystals. Our results are supported by previous studies on plasma synthesis of...

متن کامل

On Approximate Stationary Radial Solutions for a Class of Boundary Value Problems Arising in Epitaxial Growth Theory

In this paper, we consider a non-self-adjoint, singular, nonlinear fourth order boundary value problem which arises in the theory of epitaxial growth. It is possible to reduce the fourth order equation to a singular boundary value problem of second order given by w''-1/r w'=w^2/(2r^2 )+1/2 λ r^2. The problem depends on the parameter λ and admits multiple solutions. Therefore, it is difficult to...

متن کامل

Evaluation of microstructure and corrosion behavior of dissimilar laser joint between Inconel 625 and AISI 430 ferritic stainless steel

Dissimilar weld joints between stainless steels and nickel based super alloys are extensively used in petrochemical, gas and oil applications. These joints jave great challenges from metallurgical transformations point of view. In this research, microstructural evolutions and corrosion behavior of laser weld joint between Inconel 625 and AISI 430 ferritic stainless steel were investigated. Ferr...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Physical review. B, Condensed matter

دوره 54 20  شماره 

صفحات  -

تاریخ انتشار 1996